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b. 40
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composition: Op. 11, Concerto in E minor, Mvt III
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According to us, FE (→EE) positioning legatiss. under the 2nd quaver is either a result of an inaccurate reproduction of [A] or an example of an indication written within the scope of its validity. There are no doubts that legatissimo is to be applied from the beginning of the bar, together with the slur. In GE, the indication was moved to the beginning of the bar. The simultaneous presence of a slur and legatiss. probably indicates the use of 'harmonic legato' (holding elements of a chord with fingers); in this case, it would most probably consist in holding the bottom dyads longer. category imprint: Differences between sources issues: GE revisions , Legato & slurs |
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b. 42
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composition: Op. 11, Concerto in E minor, Mvt III
category imprint: Differences between sources |
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b. 48
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composition: Op. 11, Concerto in E minor, Mvt III
category imprint: Differences between sources issues: EE revisions |
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b. 53-54
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composition: Op. 11, Concerto in E minor, Mvt III
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The absence of a slur over the beginning of the ascending semiquaver fragment of the phrase must be considered an inaccuracy of notation, perhaps caused by the transition into a new line in FE. It results from a comparison with analogous figures – the discussed place is the only one in which those two semiquavers are not encompassed with a slur. The additions introduced both in EE and GE3 may be considered justified. In the main text, we suggest the first solution, since it is more frequent in the compared analogous bars. category imprint: Differences between sources; Editorial revisions issues: EE revisions , Inaccuracies in FE , GE revisions |
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b. 54
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composition: Op. 11, Concerto in E minor, Mvt III
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In FE (→GE1→GE2), the octave sign begins only just in the next bar. The patent mistake was corrected in EE straight away, yet only just in the second edition (GE3) of GE. category imprint: Interpretations within context; Differences between sources issues: EE revisions , Errors in FE , GE revisions , Errors repeated in GE |
